1. Which of the following devices revolutionized the computer industry?
a. JFET
b. D-MOSFET
c. E-MOSFET
d. Power FET
c. E-MOSFET
2. The voltage that turns on an EMOS device is the
a. Gate-source cutoff voltage
b. Pinchoff voltage
c. Threshold voltage
d. Knee voltage
c. Threshold voltage
3. Which of these may appear on the data sheet of an enhancement-mode MOSFET?
a. VGS(th)
b. ID(on)
c. VGS(on)
d. All of the above
d. All of the above
4. The VGS(on) of an n-channel E-MOSFET is
a. Less than the threshold voltage
b. Equal to the gate-source cutoff voltage
c. Greater than VDS(on)
d. Greater than VGS(th)
d. Greater than VGS(th)
5. An ordinary resistor is an example of
a. A three-terminal device
b. An active load
c. A passive load
d. A switching device
c. A passive load
6. An E-MOSFET with its gate connected to its drain is an example of
a. A three-terminal device
b. An active load
c. A passive load
d. A switching device
b. An active load
7. An E-MOSFET that operates at cutoff or in the ohmic region is an example of
a. A current source
b. An active load
c. A passive load
d. A switching device
d. A switching device
8. CMOS stands for
a. Common MOS
b. Active-load switching
c. p-channel and n-channel devices
d. Complementary MOS
d. Complementary MOS
9. VGS(on) is always
a. Less than VGS(th)
b. Equal to VDS(on)
c. Greater than VGS(th)
d. Negative
c. Greater than VGS(th)
10. With active-load switching, the upper E-MOSFET is a
a. Two-terminal device
b. Three-terminal device
c. Switch
d. Small resistance
a. Two-terminal device
11. CMOS devices use
a. Bipolar transistors
b. Complementary E-MOSFETs
c. Class A operation
d. DMOS devices
b. Complementary E-MOSFETs
12. The main advantage of CMOS is its
a. High power rating
b. Small-signal operation
c. Switching capability
d. Low power consumption
d. Low power consumption
13. Power FETs are
a. Integrated circuits
b. Small-signal devices
c. Used mostly with analog signals
d. Used to switch large currents
d. Used to switch large currents
14. When the internal temperature increases in a power FET, the
a. Threshold voltage increases
b. Gate current decreases
c. Drain current decreases
d. Saturation current increases
c. Drain current decreases
15. Most small-signal E-MOSFETs are found in
a. Heavy-current applications
b. Discrete circuits
c. Disk drives
d. Integrated circuits
d. Integrated circuits
16. Most power FETS are
a. Used in high-current applications
b. Digital computers
c. RF stages
d. Integrated circuits
a. Used in high-current applications
17. An n-channel E-MOSFET conducts when it has
a. VGS > VP
b. An n-type inversion layer
c. VDS > 0
d. Depletion layers
b. An n-type inversion layer
18. With CMOS, the upper MOSFET is
a. A passive load
b. An active load
c. Nonconducting
d. Complementary
d. Complementary
19. The high output of a CMOS inverter is
a. VDD/2
b. VGS
c. VDS
d. VDD
d. VDD
20. The RDS(on) of a power FET
a. Is always large
b. Has a negative temperature coefficient
c. Has a positive temperature coefficient
d. Is an active load
c. Has a positive temperature coefficient
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