1. For emitter bias, the voltage across the emitter resistor is the same as the voltage between the emitter and the
a. Base
b. Collector
c. Emitter
d. Ground
d
2. For emitter bias, the voltage at the emitter is 0.7 V less than the
a. Base voltage
b. Emitter voltage
c. Collector voltage
d. Ground voltage
a
3. With voltage-divider bias, the base voltage is
a. Less than the base supply voltage
b. Equal to the base supply voltage
c. Greater than the base supply voltage
d. Greater than the collector supply voltage
a
4. VDB is noted for its
a. Unstable collector voltage
b. Varying emitter current
c. Large base current
d. Stable Q point
d
5. With VDB, an increase in emitter resistance will
a. Decrease the emitter voltage
b. Decrease the collector voltage
c. Increase the emitter voltage
d. Decrease the emitter current
d
6. VDB has a stable Q point like
a. Base bias
b. Emitter bias
c. Collector-feedback bias
d. Emitter-feedback bias
b
7. VDB needs
a. Only three resistors
b. Only one supply
c. Precision resistors
d. More resistors to work better
b
8. VDB normally operates in the
a. Active region
b. Cutoff region
c. Saturation region
d. Breakdown region
a
9. The collector voltage of a VDB circuit is not sensitive to changes in the
a. Supply voltage
b. Emitter resistance
c. Current gain
d. Collector resistance
c
10. If the emitter resistance increases in a VDB circuit, the collector voltage
a. Decreases
b. Stays the same
c. Increases
d. Doubles
c
11. Base bias is associated with
a. Amplifiers
b. Switching circuits
c. Stable Q point
d. Fixed emitter current
b
12. If the emitter resistance doubles in a VDB circuit, the collector current will
a. Double
b. Drop in half
c. Remain the same
d. Increase
b
13. If the collector resistance increases in a VDB circuit, the collector voltage will
a. Decrease
b. Stay the same
c. Increase
d. Double
a
14. The Q point of a VDB circuit is
a. Hypersensitive to changes in current gain
b. Somewhat sensitive to changes in current gain
c. Almost totally insensitive to changes in current gain
d. Greatly affected by temperature changes
c
15. The base voltage of two-supply emitter bias (TSEB) is
a. 0.7 V
b. Very large
c. Near 0 V
d. 1.3 V
c
16. If the emitter resistance doubles with TSEB, the collector current will
a. Drop in half
b. Stay the same
c. Double
d. Increase
a
17. If a splash of solder shorts the collector resistor of TSEB, the collector voltage will
a. Drop to zero
b. Equal the collector supply voltage
C. Stay the same
d. Double
b
18. If the emitter resistance increases with TSEB, the collector voltage will
a. Decrease
b. Stay the same
C. Increase
d. Equal the collector supply voltage
c
19. If the emitter resistor opens with TSEB, the collector voltage will
a. Decrease
b. Stay the same
c. Increase slightly
d. Equal the collector supply voltage
d
20. In TSEB, the base current must be very
a. Small
b. Large
c. Unstable
d. Stable
a
21. The Q point of TSEB does not depend on the
a. Emitter resistance
b. Collector resistance
c. Current gain
d. Emitter voltage
c
22. The majority carriers in the emitter of a pnp transistor are
a. Holes
b. Free electrons
c. Trivalent atoms
d. Pentavalent atoms
a
23. The current gain of a pnp transistor is
a. The negative of the npn current gain
b. The collector current divided by the emitter current
c. Near zero
d. The ratio of collector current to base current
d
24. Which is the largest current in a pnp transistor?
a. Base current
b. Emitter current
c. Collector current
d. None of these
b
25. The currents of a pnp transistor are
a. Usually smaller than npn currents
b. Opposite npn currents
c. Usually larger than npn currents
d. Negative
b
26. With pnp voltage-divider bias, you must use
a. Negative power supplies
b. Positive power supplies
c. Resistors
d. Grounds
c
No comments:
Post a Comment